The importance of threading dislocations on the motion of domain boundaries in thin films.
نویسندگان
چکیده
Thin films often present domain structures whose detailed evolution is a subject of debate. We analyze the evolution of copper films, which contain both rotational and stacking domains, on ruthenium. Real-time observation by low-energy electron microscopy shows that the stacking domains evolve in a seemingly complex way. Not only do the stacking boundaries move in preferred directions, but their motion is extremely uneven and they become stuck when they reach rotational boundaries. We show that this behavior occurs because the stacking-boundary motion is impeded by threading dislocations. This study underscores how the coarse-scale evolution of thin films can be controlled by defects.
منابع مشابه
Multiplication of threading dislocations in strained metal films under sulfur exposure
Strained thin films often contain ordered networks of misfit dislocations which can determine their chemical and mechanical properties. We consider the reaction of sulfur with two-monolayer films of Cu on Ru(0001). These films contain a network of parallel partial dislocations, separating regions of fcc and hcp stacking, with threading edge dislocations where partial dislocations meet. Sulfur r...
متن کاملReal-time observation of local strain effects on nonvolatile ferroelectric memory storage mechanisms.
We use in situ transmission electron microscopy to directly observe, at high temporal and spatial resolution, the interaction of ferroelectric domains and dislocation networks within BiFeO3 thin films. The experimental observations are compared with a phase field model constructed to simulate the dynamics of domains in the presence of dislocations and their resulting strain fields. We demonstra...
متن کاملIn situ deformation of thin films on substrates.
Metallic thin-film plasticity has been widely studied by using the difference between the coefficients of thermal expansion of the film and the underlying substrate to induce stress. This approach is commonly known as the wafer curvature technique, based on the Stoney equation, which has shown that thinner films have higher yield stresses. The linear increase of the film strength as a function ...
متن کاملModeling of threading dislocation reduction in growing GaN layers
In this work, a model is developed to treat threading dislocation (TD) reduction in (0 0 0 1) wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for (0 0 1) FCC thin film growth and uses the concepts of mutual TD motion and reactions. We show that the experimentally observed slow TD reduction in GaN can be explained by low TD reaction probabilities due to T...
متن کاملStudy of Photo-Conductivity in MoS2 Thin Films Grown in Low-Temperature Aqueous Solution Bath
An experimental study over the optical response of thin MoS2 films grownby chemical bath deposition (CBD) method is presented. As two important factors, theeffect of bath temperature and growth time are considered on the photocurrentgeneration in the grown samples. The results show that increasing the growth time leadsto better optical response and higher difference betw...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Science
دوره 308 5726 شماره
صفحات -
تاریخ انتشار 2005